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创新·智造·未来
创新：深耕于氮化镓单晶衬底的技术创新
智造：助力氮化镓产业发展，解决国家重大需求
未来：致力于成为国际知名的第三代半导体材料的领军企业
山东晶镓半导体有限公司成立于2023年8月，主要从事新一代半导体材料氮化镓（GaN）、氮化铝（AlN）单晶衬底的研发、生产和销售。公司依托山东大学晶体材料国家重点实验室研发的GaN、AlN单晶生长与衬底加工技术成果，同山东大学开展全方位产学研合作交流，是国际上唯一一家同时具有GaN、AlN完全自主知识产权的生产制造厂家。自2023年成立以来公司取得了快速发展，融资过亿元，致力于成为国际知名的第三代／第四代半导体企业。
Shandong Crystal GaN Semiconductor Co., Ltd. was founded in August 2023. It is mainly engaged in the research and development, production and sales of single-crystal substrates of gallium nitride (GaN) and aluminum nitride (AlN), the new-generation semiconductor materials.
Leveraging the technological achievements in GaN and AlN single crystal growth as well as substrate processing developed by the State Key Laboratory of Crystal Materials of Shandong University, the company carries out all-round industry-university-research cooperation and exchanges with the university. It is the world’s only manufacturer that holds fully independent intellectual property rights for both GaN and AlN products.
Since its establishment in 2023, the company has achieved rapid growth with financing exceeding 100 million yuan. It strives to become a world-renowned enterprise specializing in the third and fourth-generation semiconductors.
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