GaN 射频器件凭借高频率、高功率、耐高温特性,是 5G/6G 通信基站、微波射频、卫星通信、国防军工等领域的核心器件。可实现更高功率密度与效率,满足高速通信、雷达探测等高端场景需求,市场需求持续高速增长。
With high frequency, high power and high temperature resistance, GaN RF devices are core components for 5G/6G communication base stations, microwave RF, satellite communication, national defense and military industries. They achieve higher power density and efficiency, meeting the needs of high-end scenarios such as high-speed communication and radar detection, with continuously growing market demand.